9N90-Q mosfet equivalent, n-channel power mosfet.
* RDS(ON) < 1.4Ω @ VGS = 10V, ID = 4.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
* SYMBOL
2.Drain
Power .
* FEATURES
* RDS(ON) < 1.4Ω @ VGS = 10V, ID = 4.5A * Fast Switching Capability * Avalanche Energy Specified * Impro.
The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES.
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